Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 54
Page 155
It has been proven that scratching can be avoided or reduced by timely cleaning the slurry supply system . Therefore , to avoid scratching , one strategy is to develop an in - situ method for detecting larger particles involved in CMP ...
It has been proven that scratching can be avoided or reduced by timely cleaning the slurry supply system . Therefore , to avoid scratching , one strategy is to develop an in - situ method for detecting larger particles involved in CMP ...
Page 272
The diffusion of Ti from TiN into SiOF may have effectively reduced the activity and mobility of fluorine . Conversely the Ti in sample e may have been consumed by ( Al ) to form Al3 Ti compound , reducing its diffusivity considerably .
The diffusion of Ti from TiN into SiOF may have effectively reduced the activity and mobility of fluorine . Conversely the Ti in sample e may have been consumed by ( Al ) to form Al3 Ti compound , reducing its diffusivity considerably .
Page 273
MICROSCOPIC MECHANISMS FOR REDUCED STATIC DIELECTRIC CONSTANTS IN Si - O - F ALLOY FILMS H. YANG and G. LUCOVSKY ... and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant .
MICROSCOPIC MECHANISMS FOR REDUCED STATIC DIELECTRIC CONSTANTS IN Si - O - F ALLOY FILMS H. YANG and G. LUCOVSKY ... and -bending infrared bands accounting for a significant fraction of the reduction in the dielectric constant .
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer