Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 32
Page 124
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage
and stress data obtained at room temperature for thermally - cured and e - beam
cured films are summarized in Table 2 . Compared to the thermal cure , the e ...
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage
and stress data obtained at room temperature for thermally - cured and e - beam
cured films are summarized in Table 2 . Compared to the thermal cure , the e ...
Page 259
0 um . fence the ae and out or measu Anisotropic properties The refractive
indices in three orthogonal directions , two in - plane and one out - of - plane
refractive indices , can be determined with ATR . For spin coated films , the two in
- plane ...
0 um . fence the ae and out or measu Anisotropic properties The refractive
indices in three orthogonal directions , two in - plane and one out - of - plane
refractive indices , can be determined with ATR . For spin coated films , the two in
- plane ...
Page 280
Since our previous work indicated that FSG stability depends strongly on
compressive film stress , the effect of both refractive index and film stress on the
wet etch rate was investigated . Films were deposited using both high and low
flow ...
Since our previous work indicated that FSG stability depends strongly on
compressive film stress , the effect of both refractive index and film stress on the
wet etch rate was investigated . Films were deposited using both high and low
flow ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer