Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 9
25 wt % water when exposed to 80 % relative humidity at room temperature . * a
trademark of The Dow Chemical Company INTRODUCTION Spin - on organic
dielectrics offer the possibility for increasing interconnect performance while ...
25 wt % water when exposed to 80 % relative humidity at room temperature . * a
trademark of The Dow Chemical Company INTRODUCTION Spin - on organic
dielectrics offer the possibility for increasing interconnect performance while ...
Page 64
s The relative ratio of Cu ( 2232 ) to polymeric C ( 1s ) decreased from about 0 .
28 at 300 K to 0 . 18 upon annealing to 600 K . It has been reported that a
disproportionation reaction occurs with precursors of the type Cu ( hfac ) L (
where L ...
s The relative ratio of Cu ( 2232 ) to polymeric C ( 1s ) decreased from about 0 .
28 at 300 K to 0 . 18 upon annealing to 600 K . It has been reported that a
disproportionation reaction occurs with precursors of the type Cu ( hfac ) L (
where L ...
Page 277
As expected , this conversion of the y - axes does not changes any of the points
made relative to the respective corresponding plots in Figs . 4 ( a ) , ( b ) and ( c ) .
Figs . 5 ( a ) , ( b ) and ( c ) , display the squares of the IR effective charges for the
...
As expected , this conversion of the y - axes does not changes any of the points
made relative to the respective corresponding plots in Figs . 4 ( a ) , ( b ) and ( c ) .
Figs . 5 ( a ) , ( b ) and ( c ) , display the squares of the IR effective charges for the
...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |