Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 11
... removed from the substrate with a solvated swab prior to cure . This removal step increases the instrumental accuracy by enhancing the laser reflection from the surface of the wafer without causing a significant effect on the wafer ...
... removed from the substrate with a solvated swab prior to cure . This removal step increases the instrumental accuracy by enhancing the laser reflection from the surface of the wafer without causing a significant effect on the wafer ...
Page 155
... removal rate , which is significantly affected by process factors such as polishing load , wafer carrier rotation , platen rotation speed and pad age , is one of the critical issues in CMP planarization of a dielectric film when ...
... removal rate , which is significantly affected by process factors such as polishing load , wafer carrier rotation , platen rotation speed and pad age , is one of the critical issues in CMP planarization of a dielectric film when ...
Page 158
... removal rate . The mean AErms signals for various material removal rates are plotted in figure 8. As expected , the figure does indicate an increasing trend in the signal following the increase in material removal rate . To correlate AE ...
... removal rate . The mean AErms signals for various material removal rates are plotted in figure 8. As expected , the figure does indicate an increasing trend in the signal following the increase in material removal rate . To correlate AE ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch