Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 63
... sample was transported between chambers via a double walled tube , sealed against a diferentially pumped Teflon isolation seal , which allowed sample heating and cooling between 110 K and 900 K via a combination of liquid nitrogen and ...
... sample was transported between chambers via a double walled tube , sealed against a diferentially pumped Teflon isolation seal , which allowed sample heating and cooling between 110 K and 900 K via a combination of liquid nitrogen and ...
Page 100
... sample was monitored while it was heated to 800 ° °C and purged with dry nitrogen . After the sample stopped losing weight ( ~ 10 min . ) , it was allowed to cool while purging continued . When the sample cooled to 25 ° C , a moisture ...
... sample was monitored while it was heated to 800 ° °C and purged with dry nitrogen . After the sample stopped losing weight ( ~ 10 min . ) , it was allowed to cool while purging continued . When the sample cooled to 25 ° C , a moisture ...
Page 136
... Sample beams , 3 mm wide and 45 mm long , are cut from 3 inch double - side polished Si ( 100 ) and GaAs ( 100 ) wafers . The Si and GaAs wafers are 250 and 420 μm thick , respectively . The wafers were coated with an approximately 0.5 ...
... Sample beams , 3 mm wide and 45 mm long , are cut from 3 inch double - side polished Si ( 100 ) and GaAs ( 100 ) wafers . The Si and GaAs wafers are 250 and 420 μm thick , respectively . The wafers were coated with an approximately 0.5 ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch