Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 63
The sample was transported between chambers via a double walled tube ,
sealed against a diferentially pumped Teflon isolation seal , which allowed
sample heating and cooling between 110 K and 900 K via a combination of liquid
nitrogen ...
The sample was transported between chambers via a double walled tube ,
sealed against a diferentially pumped Teflon isolation seal , which allowed
sample heating and cooling between 110 K and 900 K via a combination of liquid
nitrogen ...
Page 100
EXPERIMENTAL Aerogel samples Spherical silica gels were produced by a
method described earlier [ 6 ] using tetramethoxysilane precursor injected into ...
The weight of the sample was monitored while it was heated to 800°C and
purged ...
EXPERIMENTAL Aerogel samples Spherical silica gels were produced by a
method described earlier [ 6 ] using tetramethoxysilane precursor injected into ...
The weight of the sample was monitored while it was heated to 800°C and
purged ...
Page 136
Sample beams , 3 mm wide and 45 mm long , are cut from 3 inch double - side
polished Si ( 100 ) and GaAs ( 100 ) wafers ... The sample beams are mounted
film side down so that the polished back side can be used to reflect the probe
HeNe ...
Sample beams , 3 mm wide and 45 mm long , are cut from 3 inch double - side
polished Si ( 100 ) and GaAs ( 100 ) wafers ... The sample beams are mounted
film side down so that the polished back side can be used to reflect the probe
HeNe ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer