Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 67
Page 31
Good thermal stability is shown for F : H ratios of 1 . ... processing For
interconnect structures used in ULSI steps , which typically reach 400°C . It has
been applications , one promising class of materials shown that the materials
with the lowest ...
Good thermal stability is shown for F : H ratios of 1 . ... processing For
interconnect structures used in ULSI steps , which typically reach 400°C . It has
been applications , one promising class of materials shown that the materials
with the lowest ...
Page 143
6 . enlargement of the outlined portion is shown in Figure 7 . A mesh , which
defines the simulation resolution , is laid over the model ; a small piece of the
mesh is shown in Figure 7 . Each point on the mesh , point A for example , must
satisfy ...
6 . enlargement of the outlined portion is shown in Figure 7 . A mesh , which
defines the simulation resolution , is laid over the model ; a small piece of the
mesh is shown in Figure 7 . Each point on the mesh , point A for example , must
satisfy ...
Page 186
It is worthy for this purpose to observe their chemical structures , as it is shown in
figures 1 and 2 . It can be appreciated that the two classes of fluoropolymers
shown in these ç CE ; - CF , - CE - CF - CE – - VICE CFI CFCF Figure 1 - structure
of ...
It is worthy for this purpose to observe their chemical structures , as it is shown in
figures 1 and 2 . It can be appreciated that the two classes of fluoropolymers
shown in these ç CE ; - CF , - CE - CF - CE – - VICE CFI CFCF Figure 1 - structure
of ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer