Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 31
Good thermal stability is shown for F : H ratios of 1.5 , which result in films with a dielectric constant of -2.4 ... which typically reach 400 ° C . It has been shown that the materials with the lowest applications , one promising ...
Good thermal stability is shown for F : H ratios of 1.5 , which result in films with a dielectric constant of -2.4 ... which typically reach 400 ° C . It has been shown that the materials with the lowest applications , one promising ...
Page 143
enlargement of the outlined portion is shown in Figure 7. A mesh , which defines the simulation resolution , is laid over the model ; a small piece of the mesh is shown in Figure 7. Each point on the mesh , point A for example ...
enlargement of the outlined portion is shown in Figure 7. A mesh , which defines the simulation resolution , is laid over the model ; a small piece of the mesh is shown in Figure 7. Each point on the mesh , point A for example ...
Page 186
It is worthy for this purpose to observe their chemical structures , as it is shown in figures 1 and 2. It can be appreciated that the two classes of fluoropolymers shown in these СЕ ch С CE - CE2 CF2 CF С CE - CF CF CF2С CF С CF CF CF ...
It is worthy for this purpose to observe their chemical structures , as it is shown in figures 1 and 2. It can be appreciated that the two classes of fluoropolymers shown in these СЕ ch С CE - CE2 CF2 CF С CE - CF CF CF2С CF С CF CF CF ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |