Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 5
Films which are nominally 7 um thick after being coated onto silicon and heated have birefringence values of 0.0016 + 0.0003 . The birefringence of these films is more than 50 times lower than that of PMDA - ODA which exhibits values on ...
Films which are nominally 7 um thick after being coated onto silicon and heated have birefringence values of 0.0016 + 0.0003 . The birefringence of these films is more than 50 times lower than that of PMDA - ODA which exhibits values on ...
Page 22
mechanisms depend on the step coverage of silicon oxide deposition . In the conformal silicon oxide deposition process ( poor step coverage behavior ) , pinholes were formed at narrow line space patterns . Therefore , silicon oxide ...
mechanisms depend on the step coverage of silicon oxide deposition . In the conformal silicon oxide deposition process ( poor step coverage behavior ) , pinholes were formed at narrow line space patterns . Therefore , silicon oxide ...
Page 265
different thermal expansion coefficient compared to silicon oxide , it generates a large stress during thermal cycles . When the film adhesion degrades , the stress will result in metal blistering from the oxide film .
different thermal expansion coefficient compared to silicon oxide , it generates a large stress during thermal cycles . When the film adhesion degrades , the stress will result in metal blistering from the oxide film .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |