Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 17
Page 15
... silicon substrate during heating to 450 ° C . The sample had previously been cured at 450 ° C . The stress at room ... wafers led to the propagation of the crack in the silicon wafer , suggesting that the film was tougher than the wafer ...
... silicon substrate during heating to 450 ° C . The sample had previously been cured at 450 ° C . The stress at room ... wafers led to the propagation of the crack in the silicon wafer , suggesting that the film was tougher than the wafer ...
Page 232
... silicon wafers in a Plasmatherm 7000 series CVD reactor . Silane adhesion promoters were then diluted in IPA ( 2 % ) and applied to wafers using an SVG 8626 spin coater . The wafers were spun for 10 seconds at 50 rpm to allow a manual ...
... silicon wafers in a Plasmatherm 7000 series CVD reactor . Silane adhesion promoters were then diluted in IPA ( 2 % ) and applied to wafers using an SVG 8626 spin coater . The wafers were spun for 10 seconds at 50 rpm to allow a manual ...
Page 233
... silicon wafers and a Nanospec 200 spectroscopic interferometer . Nanospec provided an updated algorithm for measuring the PTFE . The breakdown field strength and current leakage measurements were made using a dual probe mercury probe ...
... silicon wafers and a Nanospec 200 spectroscopic interferometer . Nanospec provided an updated algorithm for measuring the PTFE . The breakdown field strength and current leakage measurements were made using a dual probe mercury probe ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch