Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 163
... slurry The selection of slurries is critical in any CMP process and particularly crucial with polymers . An appropriate slurry will not only shorten the polishing time , but also keep the surface clean ( without changing the surface ...
... slurry The selection of slurries is critical in any CMP process and particularly crucial with polymers . An appropriate slurry will not only shorten the polishing time , but also keep the surface clean ( without changing the surface ...
Page 164
... slurry : XPS and AFM results . R Slurry C C is at peak ( % ) area C - O / C - C ratio O ( % ) RMS Roughness Average Roughness ( Å / min ) ( % ) ( % ) ( Å ) ( Å ) as- 96 C - C 96 4 85 68 deposited C - O 4 Slurry - 1 95 C - C 96 5 387 303 ...
... slurry : XPS and AFM results . R Slurry C C is at peak ( % ) area C - O / C - C ratio O ( % ) RMS Roughness Average Roughness ( Å / min ) ( % ) ( % ) ( Å ) ( Å ) as- 96 C - C 96 4 85 68 deposited C - O 4 Slurry - 1 95 C - C 96 5 387 303 ...
Page 165
... Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen content ( which is not suitable for subsequent PA - N processing ) ...
... Slurry - 4 , slurry - 5 , and slurry - 7 do not affect the surface structure for PA - N films , while slurry - 3 , slurry - 6 , and slurry - 8 increase the oxygen content ( which is not suitable for subsequent PA - N processing ) ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch