Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 32
Page 115
... solvent loss - induced shrinkage stresses which develop predominantly during soft - baking at 80 ° C . In blanket films , such shrinkage due to solvent loss is accomodated by a decrease in film thickness on the order of 30-40 % . When ...
... solvent loss - induced shrinkage stresses which develop predominantly during soft - baking at 80 ° C . In blanket films , such shrinkage due to solvent loss is accomodated by a decrease in film thickness on the order of 30-40 % . When ...
Page 116
... solvent . Table II . Comparison of thin film material properties among FPI cast from NMP and with 2 additive systems for gap fill optimization Material Property Birefringence , An Out - of - plane dielectric constant ( 1 MHz ) FPI 0.145 ...
... solvent . Table II . Comparison of thin film material properties among FPI cast from NMP and with 2 additive systems for gap fill optimization Material Property Birefringence , An Out - of - plane dielectric constant ( 1 MHz ) FPI 0.145 ...
Page 259
... solvent during the drying step leads to shrinkage of the film or coating . If the film is constrained during solvent loss , shrinkage can result in the development of structure within the direction of constraint . This process is ...
... solvent during the drying step leads to shrinkage of the film or coating . If the film is constrained during solvent loss , shrinkage can result in the development of structure within the direction of constraint . This process is ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch