Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 35
Page 34
3000 2500 2000 1500 Wavenumber ( cm - 1 ) Figure 7 : FTIR spectra of - 40V
bias F : H 1 . 5 film before any annealing and after a cumulative 60 minute
thermal cycle at 400°C . The spectra at 30 and 45 minutes were identical to the
one at 60 ...
3000 2500 2000 1500 Wavenumber ( cm - 1 ) Figure 7 : FTIR spectra of - 40V
bias F : H 1 . 5 film before any annealing and after a cumulative 60 minute
thermal cycle at 400°C . The spectra at 30 and 45 minutes were identical to the
one at 60 ...
Page 63
XPS spectra were acquired in the fixed pass energy mode at 50 eV pass energy ,
using Mg Ka radiation . . The spectra discussed here were recorded with the
analyzer aligned along the sample normal . Procedures for analysis of XPS data
...
XPS spectra were acquired in the fixed pass energy mode at 50 eV pass energy ,
using Mg Ka radiation . . The spectra discussed here were recorded with the
analyzer aligned along the sample normal . Procedures for analysis of XPS data
...
Page 64
2 Cu ( 2p ) and Cu ( L , VV ) spectra after Cu ( I ) hfac ( COD ) adsorption on clean
Teflon - AF at 110 K , followed by annealing to 300 K ( bottom ) and 600 K ( top )
in UHV . Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ( I ) hfac ( COD ) ...
2 Cu ( 2p ) and Cu ( L , VV ) spectra after Cu ( I ) hfac ( COD ) adsorption on clean
Teflon - AF at 110 K , followed by annealing to 300 K ( bottom ) and 600 K ( top )
in UHV . Fig . 3 Cu ( 2p ) and Cu ( L , VV ) spectra for Cu ( I ) hfac ( COD ) ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |