Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 34
The major differences in the two spectra include the increase in the 1200 cm band relative to the 1150 cm- ' band , an increase in Time ( min ) the bands around 1470 , 1635 , and 1835 cm , and a decrease in the band around 1700 cm .
The major differences in the two spectra include the increase in the 1200 cm band relative to the 1150 cm- ' band , an increase in Time ( min ) the bands around 1470 , 1635 , and 1835 cm , and a decrease in the band around 1700 cm .
Page 63
XPS spectra were acquired in the fixed pass energy mode at 50 eV pass energy , using Mg Ka radiation .. The spectra discussed here were recorded with the analyzer aligned along the sample normal . Procedures for analysis of XPS data ...
XPS spectra were acquired in the fixed pass energy mode at 50 eV pass energy , using Mg Ka radiation .. The spectra discussed here were recorded with the analyzer aligned along the sample normal . Procedures for analysis of XPS data ...
Page 64
However , the Cu ( 2p ) spectral changes and decrease in relative Cu XPS intensity are consistent with disproportionation between 300 K and 600 K. C ( Is ) spectra recorded after annealing to 600 K ( not shown ) show some remnant of ...
However , the Cu ( 2p ) spectral changes and decrease in relative Cu XPS intensity are consistent with disproportionation between 300 K and 600 K. C ( Is ) spectra recorded after annealing to 600 K ( not shown ) show some remnant of ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer