Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 51
Low moisture uptake and high mechanical strength can be achieved . Most interesting is , it can be made to be photosensitive at deep - UV range , which provides the possibility of eliminating many chemicals and complicated processes in ...
Low moisture uptake and high mechanical strength can be achieved . Most interesting is , it can be made to be photosensitive at deep - UV range , which provides the possibility of eliminating many chemicals and complicated processes in ...
Page 82
Interface characteristics Adhesion Figure 1 shows the adhesion strength ( critical load for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large critical loads compared to those of pure Cu films .
Interface characteristics Adhesion Figure 1 shows the adhesion strength ( critical load for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large critical loads compared to those of pure Cu films .
Page 235
The values for breakdown field strength and leakage current for quenched films are considered acceptable for use in integrated circuits . In particular , the leakage current results suggest that PTFE may be suitable for use without ...
The values for breakdown field strength and leakage current for quenched films are considered acceptable for use in integrated circuits . In particular , the leakage current results suggest that PTFE may be suitable for use without ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
33 other sections not shown
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |