Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 51
Low moisture uptake and high mechanical strength can be achieved . Most
interesting is , it can be made to be photosensitive at deep - UV range , which
provides the possibility of eliminating many chemicals and complicated
processes in ...
Low moisture uptake and high mechanical strength can be achieved . Most
interesting is , it can be made to be photosensitive at deep - UV range , which
provides the possibility of eliminating many chemicals and complicated
processes in ...
Page 82
RESULTS AND DISCUSSION 1 . Interface characteristics Adhesion h of
Curificantly lareth ( critical 1 Figure 1 shows the adhesion strength ( critical load
for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large
critical ...
RESULTS AND DISCUSSION 1 . Interface characteristics Adhesion h of
Curificantly lareth ( critical 1 Figure 1 shows the adhesion strength ( critical load
for delamination ) of Cu and CuTi films on PI . CuTi films have significantly large
critical ...
Page 235
The values for breakdown field strength and leakage current for quenched films
are considered acceptable for use in integrated circuits . In particular , the
leakage current results suggest that PTFE may be suitable for use without
requiring a ...
The values for breakdown field strength and leakage current for quenched films
are considered acceptable for use in integrated circuits . In particular , the
leakage current results suggest that PTFE may be suitable for use without
requiring a ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer