Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 258
After prebake at 140 ° C for 15 minutes , there was a small initial stress of 8 MPa owing to photosensitive groups acting as plasticizers . A stress peak can be seen at about 200 ° C , which is attributed to evaporation of the volatiles ...
After prebake at 140 ° C for 15 minutes , there was a small initial stress of 8 MPa owing to photosensitive groups acting as plasticizers . A stress peak can be seen at about 200 ° C , which is attributed to evaporation of the volatiles ...
Page 280
Sidewall film thickness was measured at a point halfway down the sidewall of the underlying feature . a RESULTS AND DISCUSSION Effect of RI and Stress On Wet Etch Rate . The quality of FSG films deposited on the sidewall of a feature is ...
Sidewall film thickness was measured at a point halfway down the sidewall of the underlying feature . a RESULTS AND DISCUSSION Effect of RI and Stress On Wet Etch Rate . The quality of FSG films deposited on the sidewall of a feature is ...
Page 281
Wet etch rates of these films were expected to depend on both refractive index ( fluorine content ) and stress . Figure 2 shows that the wet etch rates of undoped TEOS oxide films increase as the stress is reduced .
Wet etch rates of these films were expected to depend on both refractive index ( fluorine content ) and stress . Figure 2 shows that the wet etch rates of undoped TEOS oxide films increase as the stress is reduced .
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |