Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 79
Page 258
During thermal curing and subsequent cooling , the residual stress was
measured in situ as a function of temperature over the range of 25 to 400 °C .
Figure 4 illustrates the stresses in the polyimide film on the silicon wafer . After
prebake at ...
During thermal curing and subsequent cooling , the residual stress was
measured in situ as a function of temperature over the range of 25 to 400 °C .
Figure 4 illustrates the stresses in the polyimide film on the silicon wafer . After
prebake at ...
Page 280
Sidewall film thickness was measured at a point halfway down the sidewall of the
underlying feature . RESULTS AND DISCUSSION Effect of RI and Stress On Wet
Etch Rate . The quality of FSG films deposited on the sidewall of a feature is not ...
Sidewall film thickness was measured at a point halfway down the sidewall of the
underlying feature . RESULTS AND DISCUSSION Effect of RI and Stress On Wet
Etch Rate . The quality of FSG films deposited on the sidewall of a feature is not ...
Page 281
Wet etch rates of these films were expected to depend on both refractive index (
fluorine content ) and stress . Figure 2 shows that the wet etch rates of undoped
TEOS oxide films increase as the stress is reduced . Figure 3 shows the wet etch
...
Wet etch rates of these films were expected to depend on both refractive index (
fluorine content ) and stress . Figure 2 shows that the wet etch rates of undoped
TEOS oxide films increase as the stress is reduced . Figure 3 shows the wet etch
...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer
Bibliographic information
| Title | Low-dielectric Constant Materials, Volume 476 Volume 381; Volume 443; Volume 476; Volume 511; Volume 565 of Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1997 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993800, 9781558993808 |
| Export Citation | BiBTeX EndNote RefMan |