Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 79
Page 258
... stress of 8 MPa owing to photosensitive groups acting as plasticizers . A stress peak can be seen at about 200 ° C , which is attributed to evaporation of the volatiles and the induced volume shrinkage . From 300-400 ° C the stress in ...
... stress of 8 MPa owing to photosensitive groups acting as plasticizers . A stress peak can be seen at about 200 ° C , which is attributed to evaporation of the volatiles and the induced volume shrinkage . From 300-400 ° C the stress in ...
Page 280
Film Stress ( MPa ) Etch rates on blanket films were determined from the film thickness before and after a 60 sec- ond dip in 6 : 1 buffered oxide etch solution . Etch rates on patterned wafers were measured by comparing SEM photographs ...
Film Stress ( MPa ) Etch rates on blanket films were determined from the film thickness before and after a 60 sec- ond dip in 6 : 1 buffered oxide etch solution . Etch rates on patterned wafers were measured by comparing SEM photographs ...
Page 281
... stress . Figure 2 shows that the wet etch rates of undoped TEOS oxide films increase as the stress is reduced . Figure 3 shows the wet etch rate dependence on stress for FSG films with varying levels of fluorine . It appears from this ...
... stress . Figure 2 shows that the wet etch rates of undoped TEOS oxide films increase as the stress is reduced . Figure 3 shows the wet etch rate dependence on stress for FSG films with varying levels of fluorine . It appears from this ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch