Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 81
Page 19
This study describes adhesion failure mechanisms for the sandwiched
fluorinated amorphous carbon film ( a - C : F ) structure during oxygen plasma
annealing . We have found 3 failure modes : 1 ) capping SiO2 layer peels off , 2 )
thickness ...
This study describes adhesion failure mechanisms for the sandwiched
fluorinated amorphous carbon film ( a - C : F ) structure during oxygen plasma
annealing . We have found 3 failure modes : 1 ) capping SiO2 layer peels off , 2 )
thickness ...
Page 117
Clearly , successful integration of FPI depends on considering such factors as
optimal adhesion promoter preparation and stress interactions between
dissimilar layers in the multilevel metal interconnect structure . In addition to
delamination ...
Clearly , successful integration of FPI depends on considering such factors as
optimal adhesion promoter preparation and stress interactions between
dissimilar layers in the multilevel metal interconnect structure . In addition to
delamination ...
Page 186
It is worthy for this purpose to observe their chemical structures , as it is shown in
figures 1 and 2 . It can be appreciated that the two classes of fluoropolymers
shown in these ç CE ; - CF , - CE - CF - CE – - VICE CFI CFCF Figure 1 - structure
of ...
It is worthy for this purpose to observe their chemical structures , as it is shown in
figures 1 and 2 . It can be appreciated that the two classes of fluoropolymers
shown in these ç CE ; - CF , - CE - CF - CE – - VICE CFI CFCF Figure 1 - structure
of ...
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer