Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 19
This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film ( a - C : F ) structure during oxygen plasma annealing . We have found 3 failure modes : 1 ) capping SiO2 layer peels off ...
This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film ( a - C : F ) structure during oxygen plasma annealing . We have found 3 failure modes : 1 ) capping SiO2 layer peels off ...
Page 117
Clearly , successful integration of FPI depends on considering such factors as optimal adhesion promoter preparation and stress interactions between dissimilar layers in the multilevel metal interconnect structure .
Clearly , successful integration of FPI depends on considering such factors as optimal adhesion promoter preparation and stress interactions between dissimilar layers in the multilevel metal interconnect structure .
Page 186
It is worthy for this purpose to observe their chemical structures , as it is shown in figures 1 and 2. ... CF3 Figure 1 - structure of a typical fluoropolymer film ( 3 ] obtained by PE - CVD of fluorinated monomers ( PE - CVD ...
It is worthy for this purpose to observe their chemical structures , as it is shown in figures 1 and 2. ... CF3 Figure 1 - structure of a typical fluoropolymer film ( 3 ] obtained by PE - CVD of fluorinated monomers ( PE - CVD ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer