Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 63
Page 61
... surfaces show that on the clean polymer surface , Cu ( 0 ) formation occurs between 300 K and 600 K in UHV . The corresponding reduction is hindered by the presence of an alumina adlayer . In addition , the Cu Auger kinetic energies ...
... surfaces show that on the clean polymer surface , Cu ( 0 ) formation occurs between 300 K and 600 K in UHV . The corresponding reduction is hindered by the presence of an alumina adlayer . In addition , the Cu Auger kinetic energies ...
Page 213
... surface roughness of films of similar thickness showed a dependence on the deposition conditions . The films deposited at a low vaporizer temperature exhibit a smooth surface ( RMS ~ 4 nm ) while those deposited at high vaporizer ...
... surface roughness of films of similar thickness showed a dependence on the deposition conditions . The films deposited at a low vaporizer temperature exhibit a smooth surface ( RMS ~ 4 nm ) while those deposited at high vaporizer ...
Page 293
... surface roughness of non - plasma treated SiOF film is 5.3 A. On the other hand , as the plasma treatment time increases to 10 min . , the surface roughness of SiOF film increases to 34.3 Å . These results might be due to the etching ...
... surface roughness of non - plasma treated SiOF film is 5.3 A. On the other hand , as the plasma treatment time increases to 10 min . , the surface roughness of SiOF film increases to 34.3 Å . These results might be due to the etching ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch