Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 76
The temperature axis of the instrument was calibrated from the melting endotherms of pure zinc and indium standards as long as there were no changes in operating conditions . The X - ray diffractometry ( XRD ) measurements were carried ...
The temperature axis of the instrument was calibrated from the melting endotherms of pure zinc and indium standards as long as there were no changes in operating conditions . The X - ray diffractometry ( XRD ) measurements were carried ...
Page 122
After spin - coating , the film was subjected to a hot - plate bake at a temperature of 150 ° C for 1-2 min . The film thickness after the spinning and baking processes is in the range of 8000 - 10000 Å . Thermal curing was carried out ...
After spin - coating , the film was subjected to a hot - plate bake at a temperature of 150 ° C for 1-2 min . The film thickness after the spinning and baking processes is in the range of 8000 - 10000 Å . Thermal curing was carried out ...
Page 223
temperature control is especially challenging when one considers that the wafer temperature depends on the clamping quality as well as the chuck temperature . 10000 9000 I 8000 DEPOSITION RATE , A / mi 7000 6000 5000 + + + + 140 130 150 ...
temperature control is especially challenging when one considers that the wafer temperature depends on the clamping quality as well as the chuck temperature . 10000 9000 I 8000 DEPOSITION RATE , A / mi 7000 6000 5000 + + + + 140 130 150 ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer