Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 80
Page 124
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage
and stress data obtained at room temperature for thermally - cured and e - beam
cured films are summarized in Table 2 . Compared to the thermal cure , the e ...
RESULTS AND DISCUSSION Film Characterization Refractive index , shrinkage
and stress data obtained at room temperature for thermally - cured and e - beam
cured films are summarized in Table 2 . Compared to the thermal cure , the e ...
Page 125
8 8 8 8 & EB - HD EB - LD EB - HD Nyw Teen Thermal Cure MW Theory Thermal
Cure Thermal Cure 4000 3800 3000 3400 3200 3000 2000 2000 2400 2200
2000 1800 Wavenumbers ( cm - 1 ) 1800 1400 1200 1000 100 000 4000 3800 ...
8 8 8 8 & EB - HD EB - LD EB - HD Nyw Teen Thermal Cure MW Theory Thermal
Cure Thermal Cure 4000 3800 3000 3400 3200 3000 2000 2000 2400 2200
2000 1800 Wavenumbers ( cm - 1 ) 1800 1400 1200 1000 100 000 4000 3800 ...
Page 261
THERMAL STABILITY STUDY OF THE INTERCONNECT SYSTEM WITH
FLUORINATED SILICATE GLASS AS IMD LAYERS Weidan Li , and Wilbur
Catabay LSI Logic Corp . , R & D Division , Santa Clara , CA 95054 Abstract
While ...
THERMAL STABILITY STUDY OF THE INTERCONNECT SYSTEM WITH
FLUORINATED SILICATE GLASS AS IMD LAYERS Weidan Li , and Wilbur
Catabay LSI Logic Corp . , R & D Division , Santa Clara , CA 95054 Abstract
While ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer