Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 122
... thickness after the spinning and baking processes is in the range of 8000 - 10000 Å . Thermal curing was carried out at 425 ° C for one hour in a horizontal furnace with N2 flow at atmospheric pressure . Electron beam exposure was ...
... thickness after the spinning and baking processes is in the range of 8000 - 10000 Å . Thermal curing was carried out at 425 ° C for one hour in a horizontal furnace with N2 flow at atmospheric pressure . Electron beam exposure was ...
Page 125
... thickness was found for the thermally - cured film , that is , the film swelled in the solvent . However , the thickness of e - beam cured films was unchanged irrespective of e - beam exposure conditions . Table 3 : Thickness Retention ...
... thickness was found for the thermally - cured film , that is , the film swelled in the solvent . However , the thickness of e - beam cured films was unchanged irrespective of e - beam exposure conditions . Table 3 : Thickness Retention ...
Page 201
... thickness was measured prior to dot formation across each wafer with spectral ellipsometry from 300 nm to 850 nm and calculated at each point by a non - linear least squares fit of thickness and the complex refractive index in the ...
... thickness was measured prior to dot formation across each wafer with spectral ellipsometry from 300 nm to 850 nm and calculated at each point by a non - linear least squares fit of thickness and the complex refractive index in the ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
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1997 Materials Research adhesion aerogel annealing atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene out-of-plane oxide oxygen parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI wafer wet etch