Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 122
The film thickness after the spinning and baking processes is in the range of 8000 - 10000 Å . Thermal curing was carried out at 425 ° C for one hour in a horizontal furnace with N2 flow at atmospheric pressure .
The film thickness after the spinning and baking processes is in the range of 8000 - 10000 Å . Thermal curing was carried out at 425 ° C for one hour in a horizontal furnace with N2 flow at atmospheric pressure .
Page 125
Solvent Resistance Table 3 shows the thickness retention ( % ) for films after immersion in N - methylpyrrolidone ( NMP ) at 90 ° C for one hour . A significant increase in the film thickness was found for the thermally - cured film ...
Solvent Resistance Table 3 shows the thickness retention ( % ) for films after immersion in N - methylpyrrolidone ( NMP ) at 90 ° C for one hour . A significant increase in the film thickness was found for the thermally - cured film ...
Page 201
accurate measurement of both thin film thickness and metal dot area is critical in the measurement of dielectric permittivity . The area of each dot was measured with a microscope at a resolution of 0.1 mm with a dot size of about 8.5 ...
accurate measurement of both thin film thickness and metal dot area is critical in the measurement of dielectric permittivity . The area of each dot was measured with a microscope at a resolution of 0.1 mm with a dot size of about 8.5 ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer