Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 60
Page 122
The film thickness after the spinning and baking processes is in the range of
8000 - 10000 Å . Thermal curing was carried out at 425 °C for one hour in a
horizontal furnace with N , flow at atmospheric pressure . Electron beam
exposure was ...
The film thickness after the spinning and baking processes is in the range of
8000 - 10000 Å . Thermal curing was carried out at 425 °C for one hour in a
horizontal furnace with N , flow at atmospheric pressure . Electron beam
exposure was ...
Page 125
Solvent Resistance Table 3 shows the thickness retention ( % ) for films after
immersion in N - methylpyrrolidone ( NMP ) at 90 °C for one hour . A significant
increase in the film thickness was found for the thermally - cured film , that is , the
film ...
Solvent Resistance Table 3 shows the thickness retention ( % ) for films after
immersion in N - methylpyrrolidone ( NMP ) at 90 °C for one hour . A significant
increase in the film thickness was found for the thermally - cured film , that is , the
film ...
Page 201
accurate measurement of both thin film thickness and metal dot area is critical in
the measurement of dielectric permittivity . The area of each dot was measured
with a microscope at a resolution of 0 . 1 mm with a dot size of about 8 . 5 mm .
accurate measurement of both thin film thickness and metal dot area is critical in
the measurement of dielectric permittivity . The area of each dot was measured
with a microscope at a resolution of 0 . 1 mm with a dot size of about 8 . 5 mm .
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer