Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 55
Page 81
MATERIAL AND INTERFACE CHARACTERIZATION OF Cu99 Tii THIN FILMS
METALLIZED ON POLYIMIDE E . Kondoh * and T . P . Nguyen * * * IMEC ,
Kapeldreef 75 , 3001 Leuven , Belgium * * Institut des Matériaux de Nantes ,
Laboratoire ...
MATERIAL AND INTERFACE CHARACTERIZATION OF Cu99 Tii THIN FILMS
METALLIZED ON POLYIMIDE E . Kondoh * and T . P . Nguyen * * * IMEC ,
Kapeldreef 75 , 3001 Leuven , Belgium * * Institut des Matériaux de Nantes ,
Laboratoire ...
Page 235
Thus the effective interline dielectric constant may be considerably lower if a
dielectric liner is not used . All of the thin ( < 0 . 5 um ) oven cooled films had
breakdown field strengths less then 0 . 01 MV / cm . This is essentially the same
as air .
Thus the effective interline dielectric constant may be considerably lower if a
dielectric liner is not used . All of the thin ( < 0 . 5 um ) oven cooled films had
breakdown field strengths less then 0 . 01 MV / cm . This is essentially the same
as air .
Page 267
THERMAL STRESSES , INTERFACIAL REACTIONS AND MICROSTRUCTURES
OF AI / Ti AND AI / TiN THIN FILMS ENCAPSULATED BY SiOF Wei - Tsu Tseng ,
Li - Wen Chen * , G . - C . Tu * National Nano Device Laboratories , Hsinchu ...
THERMAL STRESSES , INTERFACIAL REACTIONS AND MICROSTRUCTURES
OF AI / Ti AND AI / TiN THIN FILMS ENCAPSULATED BY SiOF Wei - Tsu Tseng ,
Li - Wen Chen * , G . - C . Tu * National Nano Device Laboratories , Hsinchu ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
INTERFACES AND POROUS MATERIALS | 59 |
Copyright | |
24 other sections not shown
Other editions - View all
Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode moisture observed obtained occurs oxide oxygen PA-N passivation peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer