Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 81
MATERIAL AND INTERFACE CHARACTERIZATION OF Cu 99 Tii THIN FILMS METALLIZED ON POLYIMIDE ** E. Kondoh * and T.P. Nguyen ** * IMEC , Kapeldreef 75 , 3001 Leuven , Belgium * Institut des Matériaux de Nantes , Laboratoire de Physique ...
MATERIAL AND INTERFACE CHARACTERIZATION OF Cu 99 Tii THIN FILMS METALLIZED ON POLYIMIDE ** E. Kondoh * and T.P. Nguyen ** * IMEC , Kapeldreef 75 , 3001 Leuven , Belgium * Institut des Matériaux de Nantes , Laboratoire de Physique ...
Page 235
All of the thin ( < 0.5 um ) oven cooled films had breakdown field strengths less then 0.01 MV / cm . This is essentially the same as air . However , films which were slightly thicker ( 0.7 - 1.1 um ) had strengths over one order of ...
All of the thin ( < 0.5 um ) oven cooled films had breakdown field strengths less then 0.01 MV / cm . This is essentially the same as air . However , films which were slightly thicker ( 0.7 - 1.1 um ) had strengths over one order of ...
Page 267
THERMAL STRESSES , INTERFACIAL REACTIONS AND MICROSTRUCTURES OF AI / Ti AND AI / TiN THIN FILMS ENCAPSULATED BY SiOF Wei - Tsu Tseng , Li - Wen Chen * , G.-C. Tu * National Nano Device Laboratories , Hsinchu 300 , TAIWAN * Institute of ...
THERMAL STRESSES , INTERFACIAL REACTIONS AND MICROSTRUCTURES OF AI / Ti AND AI / TiN THIN FILMS ENCAPSULATED BY SiOF Wei - Tsu Tseng , Li - Wen Chen * , G.-C. Tu * National Nano Device Laboratories , Hsinchu 300 , TAIWAN * Institute of ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer