Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 82
A short time ( 40 sec ) pre - treatment is sufficiently long to improve adhesion ( Fig . 2 ) . Plasma treatments , especially by O2 , would significantly change the surface topography of PI . In that case , mechanical interlocking is a ...
A short time ( 40 sec ) pre - treatment is sufficiently long to improve adhesion ( Fig . 2 ) . Plasma treatments , especially by O2 , would significantly change the surface topography of PI . In that case , mechanical interlocking is a ...
Page 85
Plasma pre - treatment increased the resistivity of asdeposited films , while it caused a large resistivity drop after ... When PI was pre - treated by O2 Figure 7 Film resistivity before and after plasma , the CuTi films had lower ...
Plasma pre - treatment increased the resistivity of asdeposited films , while it caused a large resistivity drop after ... When PI was pre - treated by O2 Figure 7 Film resistivity before and after plasma , the CuTi films had lower ...
Page 293
treatment time . The surface roughness of the SiOF films increased as the plasma treatment time got longer . The surface roughness of non - plasma treated SiOF film is 5.3 Å . On the other hand , as the plasma treatment time increases ...
treatment time . The surface roughness of the SiOF films increased as the plasma treatment time got longer . The surface roughness of non - plasma treated SiOF film is 5.3 Å . On the other hand , as the plasma treatment time increases ...
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Contents
Polynorbornene for Lowk Interconnection | 3 |
High Thermal Stability for ULSI Interlayer Dielectric | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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addition adhesion analysis annealing applications atoms bond capacitance chamber chemical coating compared concentration copolymers cost cured curve cycle decrease density dependence deposited determined device dielectric constant diffusion DISCUSSION effect electrical electron energy etch etch rate experiments Figure flow fluorine formed function groups heating higher improved increase indicate integrated interconnect interface layer less lines loss low dielectric constant lower materials measured mechanical metal mode modulus moisture observed obtained occurs oxide oxygen PA-N peak performance plasma polishing polyimide polymer pressure Proc properties range ratio reaction reduced refractive index relative Research resistance respectively sample shown shows Si-F signal silicon SiO2 SiOF films solution spectra strength stress structure substrate surface Table Teflon temperature TEOS thermal thermal stability thickness thin films treatment wafer