Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Page 114
... wafers for thin film property measurements or onto 200 mm wafers for integration studies . Prior to spin - coating , all wafers were treated with an aminosilane - based adhesion promoter ( AP ) , DuPont VM - 651 ( 0.05 wt ...
... wafers for thin film property measurements or onto 200 mm wafers for integration studies . Prior to spin - coating , all wafers were treated with an aminosilane - based adhesion promoter ( AP ) , DuPont VM - 651 ( 0.05 wt ...
Page 232
... wafers were wetted thoroughly with silane solution the wafers were spun for 30 seconds at 1000 rpm to remove all excess material and allow the solvent to evaporate . The wafers were then passed onto a hot plate set at a temperature of ...
... wafers were wetted thoroughly with silane solution the wafers were spun for 30 seconds at 1000 rpm to remove all excess material and allow the solvent to evaporate . The wafers were then passed onto a hot plate set at a temperature of ...
Page 262
... wafers . Prior to the deposition , the radius of Si wafer curvature was pre - measured in a Tencor FLEXUS 2900 system . During the experiment , the radius of the wafer curvature was measured at different temperatures . The temperature ...
... wafers . Prior to the deposition , the radius of Si wafer curvature was pre - measured in a Tencor FLEXUS 2900 system . During the experiment , the radius of the wafer curvature was measured at different temperatures . The temperature ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch