Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
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Results 1-3 of 4
Page 19
... wiring pitch of less than 1 μm , the reduction of metal line capacitance is essential . Spin - on organic films with low - k dielectric constants are known to be promising materials [ 1 ] . However , incorporation of these films into ...
... wiring pitch of less than 1 μm , the reduction of metal line capacitance is essential . Spin - on organic films with low - k dielectric constants are known to be promising materials [ 1 ] . However , incorporation of these films into ...
Page 69
... wiring is required to have a good gap - filling and global planarization properties . It has been demonstrated that the combined techniques of biased high density CVD and CMP ( Chemical Mechanical Polishing ) can obtain a good gap ...
... wiring is required to have a good gap - filling and global planarization properties . It has been demonstrated that the combined techniques of biased high density CVD and CMP ( Chemical Mechanical Polishing ) can obtain a good gap ...
Page 121
... wiring pitches , which have made signal propagation delay in the interconnects an appreciable and growing fraction of the total cycle time [ 1 ] . In order to minimize the interconnect RC delay , low dielectric constant ( low - k ) ...
... wiring pitches , which have made signal propagation delay in the interconnects an appreciable and growing fraction of the total cycle time [ 1 ] . In order to minimize the interconnect RC delay , low dielectric constant ( low - k ) ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
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Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch