Low-dielectric Constant Materials, Volume 476Materials Research Society, 1997 - Electric insulators and insulation |
From inside the book
Results 1-3 of 9
Page 105
... xerogel films were deposited as porous thin films by spinning the precursor sol on silicon substrates . Films of various compositions were prepared using combinations of the following precursors : methyltrimethoxysilane ...
... xerogel films were deposited as porous thin films by spinning the precursor sol on silicon substrates . Films of various compositions were prepared using combinations of the following precursors : methyltrimethoxysilane ...
Page 106
... xerogel films . EXPERIMENT For the uncured hybrid xerogel films , two different recipes were used . The first involved MTMOS , TMOS , water and HCl ( used to catalyze the hydrolysis reaction ) in molar ratios of 3 : 1 : 6.5 : 4.8 x 103 ...
... xerogel films . EXPERIMENT For the uncured hybrid xerogel films , two different recipes were used . The first involved MTMOS , TMOS , water and HCl ( used to catalyze the hydrolysis reaction ) in molar ratios of 3 : 1 : 6.5 : 4.8 x 103 ...
Page 110
... xerogel film and the silicon substrate . The dielectric constant was found to be very sensitive to moisture . For a cured xerogel film , the dielectric constant was approximately 4.4 in ambient , but decreased to 2.5 once moisture was ...
... xerogel film and the silicon substrate . The dielectric constant was found to be very sensitive to moisture . For a cured xerogel film , the dielectric constant was approximately 4.4 in ambient , but decreased to 2.5 once moisture was ...
Contents
Polynorbornene for Lowk Interconnection | 3 |
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
adhesion aerogel annealing as-deposited atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant dielectric material diffusion e-beam cured effect electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen PA-N film parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer polymerization precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI vapor wafer wet etch