Quantum Electronics and Coherent Light, Volume 31 |
Contents
R Y CHIAO E GARMIRE and C H TOWNES | 16 |
B LAX Infrared semiconductor lasers | 110 |
J P GORDON | 156 |
Copyright | |
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absorption amplitude anti-Stokes approximation assume atoms beam calculation cavity cm-¹ coefficient components conduction band configuration corresponding crystal field density density matrix density operator diode dipole electric electrons emission line emitted energy levels equations etalon excited exciton experimental Fabry-Perot factor fluorescence Fourier function GaAs given h₂ harmonic infra-red inhomogeneous integral intensity interaction interferometer inversion ions Journ laser Lett light line width linear magnetic field maser matrix element measurements mirrors modes molecule N₂ noise nonlinear obtained operation optical oscillator parameters phase photon photon numbers Phys plane polarization pumping quantum radiation Raman effect rare-earth region Rendiconti S.I.F. resolving power semiconductor shown in Fig solution spectra spectrum spontaneous emission stimulated emission Stokes symmetry temperature theory threshold tion transition valence band vector velocity vibration vibronics w₁ w₂ wave wavelength ΔΩ