Compound Semiconductors 2004: Compound Semiconductors for Quantum Science and Nanostructures

Front Cover
J.C. Woo, H. Hasegawa, Y.S. Kwon, T. Yao, K.H. Yoo
CRC Press, Apr 1, 2005 - Science - 400 pages
Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'.
These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.
 

Contents

Nanostructure electronic and optoelectronic devices
1
Dependence of BandOffset on Sb content in AlGaAs GaAsSb Quantum
9
Fabrication of SelfAssembled Nanodots at Arbitrary Locations by Spatially
17
Ultrafast Optical Gate Switch of AlGaAsAlAs MultiLayer Structure Using
119
Magnetization dependent photoconductivity of GaMnAsZnSe diode
135
Tailoring of the structure and magnetic properties of aMnAs spin injection
149
Ferromagnetic GaSbInAsbased Materials and MnAs Thin Films
161
Ferromagnetic Properties of Gd doped
175
A Yamamoto
238
Cubic Inn Growth on Rplane 10 T2 Sapphire by ECRMBE
239
Defect control in GaInNAs films grown by atomic H assisted RFMBE
255
Electron Traps in AlGaNGaN MISHEMTS Observed by Drain Current
271
AlGaNGaN MISHEMTs with ZrO2 Gate Insulator
279
High Power InGaNGaN FlipChip Blue and White
295
Effect of ambient gases on structural and optical characteristics of post
311
Copyright

SelfConsistent Analysis of Electron Transport Properties in Quantum Wires
193

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Page 498 - Morgan 177 Optical and Laser Diagnostics 2002 Papers presented at the First International Conference, London, UK Edited by C Arcoumanis and KTV Grattan 174 Compound Semiconductors 2002 Papers presented at the 29th International Symposium on Compound Semiconductors, Lausanne, Switzerland Edited by M Ilegems, G Weimann and J Wagner...
Page 498 - Masullo 180 Microscopy of Semiconducting Materials 2003 Papers presented at the Institute of Physics Conference, Cambridge, UK Edited by AG Cullis and PA Midgley 179 Electron Microscopy and Analysis 2003 Papers presented at the Institute of Physics Electron Microscopy and...
Page iii - GaAs and related compounds, particularly in relating growth parameters, composition and structure to electronic properties for pioneering the development of GaAs MESFETs, MMICs. circuit fabrication and analytical techniques for leading work on bandgap engineering of semiconductor devices and discovery of many new phenomena in artificially structured semiconductors for his pioneering and outstanding contributions in the field of III-V nitride compound semiconductors for his seminal contribution to...

About the author (2005)

J.C. Woo, H. Hasegawa, Y.S. Kwon, Y.S., T. Yao, K.H. Yoo

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