Compound Semiconductors 2004: Compound Semiconductors for Quantum Science and NanostructuresJ.C. Woo, H. Hasegawa, Y.S. Kwon, T. Yao, K.H. Yoo Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering. |
Contents
Nanostructure electronic and optoelectronic devices | 1 |
Dependence of BandOffset on Sb content in AlGaAs GaAsSb Quantum | 9 |
Fabrication of SelfAssembled Nanodots at Arbitrary Locations by Spatially | 17 |
Ultrafast Optical Gate Switch of AlGaAsAlAs MultiLayer Structure Using | 119 |
Magnetization dependent photoconductivity of GaMnAsZnSe diode | 135 |
Tailoring of the structure and magnetic properties of aMnAs spin injection | 149 |
Ferromagnetic GaSbInAsbased Materials and MnAs Thin Films | 161 |
Ferromagnetic Properties of Gd doped | 175 |
A Yamamoto | 238 |
Cubic Inn Growth on Rplane 10 T2 Sapphire by ECRMBE | 239 |
Defect control in GaInNAs films grown by atomic H assisted RFMBE | 255 |
Electron Traps in AlGaNGaN MISHEMTS Observed by Drain Current | 271 |
AlGaNGaN MISHEMTs with ZrO2 Gate Insulator | 279 |
High Power InGaNGaN FlipChip Blue and White | 295 |
Effect of ambient gases on structural and optical characteristics of post | 311 |
SelfConsistent Analysis of Electron Transport Properties in Quantum Wires | 193 |
Common terms and phrases
2005 IOP Publishing 31st Int AlGaAs AlGaN AlGaN/GaN alloys annealing Appl atoms band gap beam bias buffer layer cap layer capacitance carrier density characteristics cm³ Compound Semiconductors conduction band crystal device diffraction diode doped effect electrical electron emission energy epilayers epitaxial etching experimental fabricated ferromagnetic Figure frequency function GaAs GaCrN GaInNAS gate grown growth temperature HEMT heterostructures HVPE hysteresis IEEE increases InGaAs InGaN interface IOP Publishing Ltd Korea laser lattice Lett magnetic field measured MnAs MOCVD molecular beam epitaxy nano-wires observed ohmic contact optical Paper presented peak phase photonic Phys PL intensity polarization presented at 31st properties pulse quantum dots quantum wire Raman ratio region room temperature sample sapphire Seoul September 2004 shown in Fig shows simulation spin spintronics structure Symp Technology thickness undoped valence band voltage waveguide wavelength width ZnO films
Popular passages
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