Abstract BookThe Society., 1991 - Materials science |
From inside the book
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Page 9
... amorphous phase still provides the largest challenge . New diagnostic techniques are needed and developed to understand the mechanism of amorphization and crystallization and to characterize the complexity of defects recently discovered ...
... amorphous phase still provides the largest challenge . New diagnostic techniques are needed and developed to understand the mechanism of amorphization and crystallization and to characterize the complexity of defects recently discovered ...
Page 19
... amorphous silicon in terms of fast interstitial diffusion and trapping at defects intrinsic to the amorphous sil- icon structure . While in the thermal process an energy of about 1 eV is required to release an impurity from its trap ...
... amorphous silicon in terms of fast interstitial diffusion and trapping at defects intrinsic to the amorphous sil- icon structure . While in the thermal process an energy of about 1 eV is required to release an impurity from its trap ...
Page 106
... amorphous ( c - a ) interface due to self - diffusion in the amorphous phase , assisted by a free energy decrease equal to the difference in free energies between the amorphous and crystalline phases . Due to a mismatch in the bulk ...
... amorphous ( c - a ) interface due to self - diffusion in the amorphous phase , assisted by a free energy decrease equal to the difference in free energies between the amorphous and crystalline phases . Due to a mismatch in the bulk ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO