Abstract BookThe Society., 1991 - Materials science |
From inside the book
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Page 194
... devices had barrier heights of 0.75 eV ( n = 1.06 ) for ( Cr / Au ) / GaAs and 0.68 eV ( n = 1.05 ) for ( Cr / Au ) / In ... , Ga ...... „ As . The absorption edge for GaAs photodiodes was 880 nm while In . ,, Ga .. , As photodiodes ...
... devices had barrier heights of 0.75 eV ( n = 1.06 ) for ( Cr / Au ) / GaAs and 0.68 eV ( n = 1.05 ) for ( Cr / Au ) / In ... , Ga ...... „ As . The absorption edge for GaAs photodiodes was 880 nm while In . ,, Ga .. , As photodiodes ...
Page 284
... DEVICES . William L. Olson . Betty Zuck , Boo Nilsson , Superconductor Technologies Inc. , 460 Ward Drive Suite F , Santa Barbara , CA 93111 . Passivation layers are widely used in microelectronics to prevent corrosion and provide ...
... DEVICES . William L. Olson . Betty Zuck , Boo Nilsson , Superconductor Technologies Inc. , 460 Ward Drive Suite F , Santa Barbara , CA 93111 . Passivation layers are widely used in microelectronics to prevent corrosion and provide ...
Page 304
... device . The current - voltage ( I - V ) characteristics of these devices are similar to those predicted , by the resistively shunted junction ( RSJ ) model . Devices with Ag bridges typically have resistances below 1 o and I ̧R ...
... device . The current - voltage ( I - V ) characteristics of these devices are similar to those predicted , by the resistively shunted junction ( RSJ ) model . Devices with Ag bridges typically have resistances below 1 o and I ̧R ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO