Abstract BookThe Society., 1991 - Materials science |
From inside the book
Results 1-3 of 91
Page 63
... etching proceeds through a thermal reaction on the surface . Moreover , the divergence of nozzle beam is so small that highly anisotropic etching is expected . To verify the high potentiality of the nozzle beam etching mentioned above ...
... etching proceeds through a thermal reaction on the surface . Moreover , the divergence of nozzle beam is so small that highly anisotropic etching is expected . To verify the high potentiality of the nozzle beam etching mentioned above ...
Page 64
... etch rate was approximately 1.3 times higher than in C12 plasmas . These results indicate that a small amount of oxygen plays an important role in the n poly - Si etching reaction . The etching mechanisms have been investigated using ...
... etch rate was approximately 1.3 times higher than in C12 plasmas . These results indicate that a small amount of oxygen plays an important role in the n poly - Si etching reaction . The etching mechanisms have been investigated using ...
Page 192
... Etching ( RIE ) using a methane and hydrogen gas mixture has been widely used in the fabrication of MESFETs , MODFETS and nanoscale devices . This etch chemistry produces a slow etch rate together with a very smooth surface morphology ...
... Etching ( RIE ) using a methane and hydrogen gas mixture has been widely used in the fabrication of MESFETs , MODFETS and nanoscale devices . This etch chemistry produces a slow etch rate together with a very smooth surface morphology ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO