Abstract BookThe Society., 1991 - Materials science |
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Page 48
... laser wavelength used for ablation can be chosen between 1064 , 532 , 355 , and 266 nm , from a Nd - YAG laser . This presentation will give details of the PLD system and the use of its diagnostics to better understand the laser ...
... laser wavelength used for ablation can be chosen between 1064 , 532 , 355 , and 266 nm , from a Nd - YAG laser . This presentation will give details of the PLD system and the use of its diagnostics to better understand the laser ...
Page 79
... LASER ABLATION · E. FOGARASSY , A. SLAOUI , C. FUCHS and J.P. STOQUERT Centre de Recherches Nucléaires ( IN2P ̧ ) Laboratoire PHASE ( UPR du CNRS n ° 292 ) - 67037 STRASBOURG Cedex ( F ) Laser ablation has been successfully used to ...
... LASER ABLATION · E. FOGARASSY , A. SLAOUI , C. FUCHS and J.P. STOQUERT Centre de Recherches Nucléaires ( IN2P ̧ ) Laboratoire PHASE ( UPR du CNRS n ° 292 ) - 67037 STRASBOURG Cedex ( F ) Laser ablation has been successfully used to ...
Page 289
Materials Research Society. Meeting. H8.10 PROBING THE LASER ABLATION OF YBą2Cu , O . BY LASER INDUCED FLUORESCENCE SPECTROSCOPY : INTERNAL ENERGY MEASUREMENTS AND REACTION DYNAMICS . Charles E. Otis , IBM Endicott Laser Spectroscopy ...
Materials Research Society. Meeting. H8.10 PROBING THE LASER ABLATION OF YBą2Cu , O . BY LASER INDUCED FLUORESCENCE SPECTROSCOPY : INTERNAL ENERGY MEASUREMENTS AND REACTION DYNAMICS . Charles E. Otis , IBM Endicott Laser Spectroscopy ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO