Abstract BookThe Society., 1991 - Materials science |
From inside the book
Results 1-3 of 96
Page 157
... measurements can be used to study the influence of various deposition parameters ( e.g. substrate temperature , gas am- bient etc. ) on the growth and structure of thin films . Furthermore , using aluminium films con- taining different ...
... measurements can be used to study the influence of various deposition parameters ( e.g. substrate temperature , gas am- bient etc. ) on the growth and structure of thin films . Furthermore , using aluminium films con- taining different ...
Page 269
... measurements of thermopover in an untwinned single crystal of YBa¿Cu2O , - , for T s 325K . The thermopower ( 5 ) has been measured in both the a- and b axia directiona for two oxygen configurations on the same crystal . Employing ...
... measurements of thermopover in an untwinned single crystal of YBa¿Cu2O , - , for T s 325K . The thermopower ( 5 ) has been measured in both the a- and b axia directiona for two oxygen configurations on the same crystal . Employing ...
Page 323
... measurements showed that the ( 100 ) planes are the preferred fracture planes in this material and that the critical stress intensity factor for propagating a crack on the ( 001 ) basal plane is the lowest . i.e. , Kc ( 001 ) < Kc ( 100 ) ...
... measurements showed that the ( 100 ) planes are the preferred fracture planes in this material and that the critical stress intensity factor for propagating a crack on the ( 001 ) basal plane is the lowest . i.e. , Kc ( 001 ) < Kc ( 100 ) ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO