Abstract BookThe Society., 1991 - Materials science |
From inside the book
Results 1-3 of 88
Page 21
... oxide . At 1100 ° C the ( SFs ) were removed . At 1200 ° C no defects remained beneath the buried oxide . These results indicate that dislocation formation in the top Si layer of SIMOX occurs during thermal ramping . In RTA processing ...
... oxide . At 1100 ° C the ( SFs ) were removed . At 1200 ° C no defects remained beneath the buried oxide . These results indicate that dislocation formation in the top Si layer of SIMOX occurs during thermal ramping . In RTA processing ...
Page 101
... oxide on the surface . We have investigated the changes on the Au surface during this procedure using in situ electrochemical scanning tunneling microscopy . In perchlorate solution the onset of oxidation is associated with roughening ...
... oxide on the surface . We have investigated the changes on the Au surface during this procedure using in situ electrochemical scanning tunneling microscopy . In perchlorate solution the onset of oxidation is associated with roughening ...
Page 583
... oxide formed by conventional impregnation . This results in a higher methanol synthesis acitivity . The preparation , characterization , and catalytic properties of these supported oxides will be described . 9:00 A.M. U5.2 STUDY OF ...
... oxide formed by conventional impregnation . This results in a higher methanol synthesis acitivity . The preparation , characterization , and catalytic properties of these supported oxides will be described . 9:00 A.M. U5.2 STUDY OF ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO