Abstract Book

alloy amorphous analysis annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plane plasma profiles properties PULSED LASER DEPOSITION range reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering strain stress structure studied substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafer X-ray diffraction YBCO