Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 391
... flow separations and recir- culations further complicating the flow field . Figure 3 shows examples of these flow phenomena . A scaling analysis of simple axisymmetric flows relevant to vertical reactors indicates that the ratio of ...
... flow separations and recir- culations further complicating the flow field . Figure 3 shows examples of these flow phenomena . A scaling analysis of simple axisymmetric flows relevant to vertical reactors indicates that the ratio of ...
Page 392
... flow simulations have been necessary to explore the multitude of mixed convection and flow separation phenomena possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between ...
... flow simulations have been necessary to explore the multitude of mixed convection and flow separation phenomena possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between ...
Page 395
... flow to be expected , if fluid properties evaluated at the average temperature are used to calculate Ra . The presence of the side walls stabilizes the free convective flow , increasing Raer slightly above the value of Racr = 1,708 for flow ...
... flow to be expected , if fluid properties evaluated at the average temperature are used to calculate Ra . The presence of the side walls stabilizes the free convective flow , increasing Raer slightly above the value of Racr = 1,708 for flow ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength