Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 407
... growth is the most studied system and provides a model of OMVPE growth behavior . There are several key features of ... rate of the semiconductor is deter- mined by a variety of factors . The primary determinants of the growth rate are ...
... growth is the most studied system and provides a model of OMVPE growth behavior . There are several key features of ... rate of the semiconductor is deter- mined by a variety of factors . The primary determinants of the growth rate are ...
Page 408
... growth rate of GaAs exhibits three regimes with growth temperature . The growth temperature range from ~ 600 to 800 ° C is used typically for GaAs growth from Ga ( CH3 ) 3 and AsH3 . ( Data taken from Ref . 198. ) The growth rate in the ...
... growth rate of GaAs exhibits three regimes with growth temperature . The growth temperature range from ~ 600 to 800 ° C is used typically for GaAs growth from Ga ( CH3 ) 3 and AsH3 . ( Data taken from Ref . 198. ) The growth rate in the ...
Page 416
... growth situations . The growth of III - V semiconductor alloys can be divided into the mixed group III alloys , such ... rate of a binary com- pound exhibits a simple linear dependence on the gas phase mole fraction of the organometallic ...
... growth situations . The growth of III - V semiconductor alloys can be divided into the mixed group III alloys , such ... rate of a binary com- pound exhibits a simple linear dependence on the gas phase mole fraction of the organometallic ...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength