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Dopant Region Imaging on Front Surface of Silicon Devices Using a Coaxial PhotonIon Column
Newly Developed Scanning LaserSQUID Microscope
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Analysis November 6-10 backside bondpad capacitor cell characterization chip circuit CMOS contact resistance contamination copper corrosion cross-section damage defect delamination deprocessing device device under test dislocation dopant EBIC electrical emission etch failing Failure Analysis Failure Analysis November failure mechanism Figure focused ion beam Freescale Semiconductor functional gate oxide identified inspection integrated circuits interface International Symposium ion beam IREM ISTFA laser laser stimulation leakage lock-in lock-in amplifier magnification material McEnery Convention Center measurements method microscopy mode node OBIRCH observed optical output package parameters pattern pixel probe region root cause sample preparation scan chain Scanning Electron Microscope semiconductor Shmoo plot shown in Fig shows signal silicide silicon simulation solder joints structure substrate surface Symposium for Testing technique temperature Testing and Failure thermal thickness tool transistor trench VCSEL voltage contrast wafer x-ray