Semiconductor Devices and Integrated ElectronicsFor some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design. |
From inside the book
Results 1-5 of 89
Page x
... Characteristics of Photodiodes 676 760 13.2 Composition and Characteristics of Various Photocathodes 14.1 Figures of Merit for Various LED Geometries per Unit 781 Internal Light Flux Generation ( n = 3.6 ) 14.2 Ionization Energies of ...
... Characteristics of Photodiodes 676 760 13.2 Composition and Characteristics of Various Photocathodes 14.1 Figures of Merit for Various LED Geometries per Unit 781 Internal Light Flux Generation ( n = 3.6 ) 14.2 Ionization Energies of ...
Page xiii
... Characteristics / Diode Reverse Characteristics / 25 Junction Transient Characteristics / 8 33 2 1.5 Rectifier Circuits / 55 1.6 Zener Reference Diodes / 61 1.7 1.8 Diodes with Negative Resistance / Electron Beam Bombarded Semiconductor ...
... Characteristics / Diode Reverse Characteristics / 25 Junction Transient Characteristics / 8 33 2 1.5 Rectifier Circuits / 55 1.6 Zener Reference Diodes / 61 1.7 1.8 Diodes with Negative Resistance / Electron Beam Bombarded Semiconductor ...
Page 1
... CHARACTERISTICS 1.2.1 The Exponential Ideality Factor n 1.2.2 Some Factors Influencing the Forward Characteristics 1.2.3 PN Junction Capacitance 1.3 DIODE REVERSE CHARACTERISTICS 1.4 JUNCTION TRANSIENT CHARACTERISTICS 1.4.1 Junction ...
... CHARACTERISTICS 1.2.1 The Exponential Ideality Factor n 1.2.2 Some Factors Influencing the Forward Characteristics 1.2.3 PN Junction Capacitance 1.3 DIODE REVERSE CHARACTERISTICS 1.4 JUNCTION TRANSIENT CHARACTERISTICS 1.4.1 Junction ...
Page 8
... CHARACTERISTICS Consider a pn junction structure with an abrupt doping step as shown in Fig . 1.1 . The Fermi levels equalize across the junction and across the metal contacts when no external voltage is applied and the current flow is ...
... CHARACTERISTICS Consider a pn junction structure with an abrupt doping step as shown in Fig . 1.1 . The Fermi levels equalize across the junction and across the metal contacts when no external voltage is applied and the current flow is ...
Page 11
... characteristic predicted is shown in Fig . 1.6 ( a ) where the factor n is seen to vary between 1 and 2 depending on ... characteristics for diodes with long regions of intermediate values of n are given in Fig . 1.7 ( a ) . One effect ...
... characteristic predicted is shown in Fig . 1.6 ( a ) where the factor n is seen to vary between 1 and 2 depending on ... characteristics for diodes with long regions of intermediate values of n are given in Fig . 1.7 ( a ) . One effect ...
Contents
12 | |
29 | |
54 | |
77 | |
87 | |
Solar material resources InP GaAs CdS Fig 12 29 | 94 |
Microwave Applications of Diodes Varactors | 137 |
Bipolar Junction Transistors | 195 |
Integrated Circuit Applications | 519 |
ChargeTransfer Devices | 590 |
AvalancheDiode Microwave Oscillators Amplifiers | 643 |
Solar Cells | 704 |
Light Detecting Semiconductor Devices | 754 |
Light Emitting Diodes and Injection Lasers | 815 |
Since GaAs has a bandgap of 1 45 eV the recombination radiation that | 881 |
Semiconductor Sensors and Transducers | 891 |
Thyristors Controlled PNPN and Related Switch | 287 |
JFETs and MESFETS Field Effect Transistors | 332 |
MOSFETs IGFETs | 377 |
Integrated Circuit Fundamentals | 468 |
Book List | 945 |
Subject Index | 975 |
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amplifier Appl applications avalanche bandgap barrier height base region bias breakdown voltage capacitance capacitor cathode channel characteristics charge charge-coupled devices chip cm² cm³ collector current density depletion region detector Devices Meeting Technical diffusion Discuss doping effects efficiency Electron Devices Meeting emission emitter energy epitaxial frequency GaAs gate heterojunction hole IEEE International Electron IEEE Trans Impatt Impatt diodes impedance impurity injection input integrated circuit interface International Electron Devices laser layer Lett lifetime logic McGraw-Hill Meeting Technical Digest metal Microwave minority carrier modulation MOSFET n-type noise optical oscillator output oxide p-n junction parameters permission from IEEE photon Phys Proc pulse recombination Reprinted with permission resistance Schottky barrier Schottky diode semiconductor shown in Fig signal silicon SiO2 solar cells Solid-State Circuits Solid-State Electronics structure substrate surface switching temperature thickness thyristor tunnel diode turn-on Zener diode