Semiconductor Devices and Integrated ElectronicsFor some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design. |
From inside the book
Results 1-5 of 82
Page ix
... Silicon 1.4 Rectifier Circuit Characteristics 1.5 Summary List of Advanced Lumped Element EBS Devices Resulting from the Combination of Electron Beam and Semiconductor Technologies Page 40 45 51 60 74 2.1 Barrier Heights for Metals on n ...
... Silicon 1.4 Rectifier Circuit Characteristics 1.5 Summary List of Advanced Lumped Element EBS Devices Resulting from the Combination of Electron Beam and Semiconductor Technologies Page 40 45 51 60 74 2.1 Barrier Heights for Metals on n ...
Page xvi
... Silicon Solar Cells / 712 12.3 12.4 Solar Cells of GaAs , InP , and Related Semiconductors / Cells of CdS and Related Semiconductors / 733 740 12.5 Discussion / 12.6 Questions / 743 744 12.7 References and Further Reading Suggestions ...
... Silicon Solar Cells / 712 12.3 12.4 Solar Cells of GaAs , InP , and Related Semiconductors / Cells of CdS and Related Semiconductors / 733 740 12.5 Discussion / 12.6 Questions / 743 744 12.7 References and Further Reading Suggestions ...
Page 30
... Silicon 16 10 16 = NDNA ND + NA 1014 1015 Ni 200 388 100 80 VB , volts 40 40 Silicon 20 20 6 0∞ ∞ 10 8 1017 - 3 1018 " cm -Germanium 1019 3 13 4 2 1019 1020 1021 1022 Gradient , cm 1023 - 4 1024 Fig . 1.15 . Avalanche breakdown ...
... Silicon 16 10 16 = NDNA ND + NA 1014 1015 Ni 200 388 100 80 VB , volts 40 40 Silicon 20 20 6 0∞ ∞ 10 8 1017 - 3 1018 " cm -Germanium 1019 3 13 4 2 1019 1020 1021 1022 Gradient , cm 1023 - 4 1024 Fig . 1.15 . Avalanche breakdown ...
Page 70
... SILICON BASE TWO CONTACT CERAMIC AIR GAP BAR UNIJUNCTION TRANSISTOR BASE ONE CONTACT GOLD WIRE HEADER EMITTER ALUMINUM WIRE N - TYPE SILICON RADIUS = r . BASE BASE TWO CONTACT HEADER CUBE UNIJUNCTION TRANSISTOR Fig . 1.47 . Various ...
... SILICON BASE TWO CONTACT CERAMIC AIR GAP BAR UNIJUNCTION TRANSISTOR BASE ONE CONTACT GOLD WIRE HEADER EMITTER ALUMINUM WIRE N - TYPE SILICON RADIUS = r . BASE BASE TWO CONTACT HEADER CUBE UNIJUNCTION TRANSISTOR Fig . 1.47 . Various ...
Page 71
... SILICON N + SILICON N - TYPE SILICON SUBSTRATE DIFFUSED UNIJUNCTION TRANSISTOR P - TYPE SILICON N + SILICON BASE ONE EMITTER BASE TWO OXIDE -N + SILICON -N - TYPE SILICON SUBSTRATE Figure 1.47 ( continued ) A deflection modulation EBS ...
... SILICON N + SILICON N - TYPE SILICON SUBSTRATE DIFFUSED UNIJUNCTION TRANSISTOR P - TYPE SILICON N + SILICON BASE ONE EMITTER BASE TWO OXIDE -N + SILICON -N - TYPE SILICON SUBSTRATE Figure 1.47 ( continued ) A deflection modulation EBS ...
Contents
12 | |
29 | |
54 | |
77 | |
87 | |
Solar material resources InP GaAs CdS Fig 12 29 | 94 |
Microwave Applications of Diodes Varactors | 137 |
Bipolar Junction Transistors | 195 |
Integrated Circuit Applications | 519 |
ChargeTransfer Devices | 590 |
AvalancheDiode Microwave Oscillators Amplifiers | 643 |
Solar Cells | 704 |
Light Detecting Semiconductor Devices | 754 |
Light Emitting Diodes and Injection Lasers | 815 |
Since GaAs has a bandgap of 1 45 eV the recombination radiation that | 881 |
Semiconductor Sensors and Transducers | 891 |
Thyristors Controlled PNPN and Related Switch | 287 |
JFETs and MESFETS Field Effect Transistors | 332 |
MOSFETs IGFETs | 377 |
Integrated Circuit Fundamentals | 468 |
Book List | 945 |
Subject Index | 975 |
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Common terms and phrases
amplifier Appl applications avalanche bandgap barrier height base region bias breakdown voltage capacitance capacitor cathode channel characteristics charge charge-coupled devices chip cm² cm³ collector current density depletion region detector Devices Meeting Technical diffusion Discuss doping effects efficiency Electron Devices Meeting emission emitter energy epitaxial frequency GaAs gate heterojunction hole IEEE International Electron IEEE Trans Impatt Impatt diodes impedance impurity injection input integrated circuit interface International Electron Devices laser layer Lett lifetime logic McGraw-Hill Meeting Technical Digest metal Microwave minority carrier modulation MOSFET n-type noise optical oscillator output oxide p-n junction parameters permission from IEEE photon Phys Proc pulse recombination Reprinted with permission resistance Schottky barrier Schottky diode semiconductor shown in Fig signal silicon SiO2 solar cells Solid-State Circuits Solid-State Electronics structure substrate surface switching temperature thickness thyristor tunnel diode turn-on Zener diode