Istfa 2003: Proceedings of the 29Th International Symposium for Testing and Failure Analysis |
Contents
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cp2003istfa099 | 99 |
cp2003istfa105 | 105 |
session_5 | 110 |
cp2003istfa111 | 111 |
cp2003istfa120 | 120 |
cp2003istfa125 | 125 |
session_6 | 131 |
cp2003istfa132 | 132 |
cp2003istfa140 | 140 |
cp2003istfa144 | 144 |
cp2003istfa153 | 153 |
cp2003istfa158 | 158 |
session_7 | 166 |
cp2003istfa167 | 167 |
cp2003istfa177 | 177 |
cp2003istfa184 | 184 |
cp2003istfa191 | 191 |
cp2003istfa197 | 197 |
session_8 | 205 |
cp2003istfa206 | 206 |
cp2003istfa209 | 209 |
cp2003istfa215 | 215 |
session_9 | 221 |
cp2003istfa222 | 222 |
cp2003istfa232 | 232 |
cp2003istfa242 | 242 |
session_10 | 248 |
cp2003istfa249 | 249 |
cp2003istfa256 | 256 |
cp2003istfa259 | 259 |
cp2003istfa311 | 311 |
cp2003istfa317 | 317 |
cp2003istfa320 | 320 |
cp2003istfa325 | 325 |
session_11 | 330 |
cp2003istfa331 | 331 |
cp2003istfa338 | 338 |
cp2003istfa343 | 343 |
cp2003istfa348 | 348 |
cp2003istfa355 | 355 |
session_12 | 362 |
cp2003istfa363 | 363 |
cp2003istfa371 | 371 |
cp2003istfa378 | 378 |
cp2003istfa384 | 384 |
cp2003istfa391 | 391 |
session_13 | 397 |
cp2003istfa398 | 398 |
cp2003istfa406 | 406 |
cp2003istfa419 | 413 |
cp2003istfa413 | 419 |
session_14 | 425 |
cp2003istfa426 | 426 |
cp2003istfa431 | 431 |
session_15 | 436 |
cp2003istfa437 | 437 |
cp2003istfa440 | 440 |
session_16 | 446 |
cp2003istfa447 | 447 |
cp2003istfa452 | 452 |
cp2003istfa456 | 456 |
cp2003istfa465 | 465 |
session_17 | 470 |
cp2003istfa471 | 471 |
cp2003istfa478 | 478 |
session_18 | 485 |
cp2003istfa486 | 486 |
cp2003istfa496 | 496 |
cp2003istfa506 | 506 |
cp2003istfa_index | 515 |
Common terms and phrases
2-6 November 2003 ASM International 29th International Symposium applied ASM International backside bit cell bondpads capacitance capacitor cause chip circuit circuitry CMOS components contamination copper correlation defect deformation deprocessing detector device diagnosis dielectric diode dopant electrical energy epoxy etch failure analysis failure pattern instances film flip chip focused ion beam function gate oxide inductors integrated circuits Intel Corporation interconnect interface ion beam isolation ISTFA latchup layer layout leakage magnetic material measurement metal micron optical package parameters passive voltage contrast photons photoresist polishing poly probe region resistance resolution sample preparation scan scan chain secondary electron semiconductor shown in Figure shows signal silicide silicon simulation solder bump spatial SRAM structure substrate surface Symposium for Testing technique temperature test pattern Testing and Failure thermal thickness transistor trench TRPE wafer
Popular passages
Page 204 - Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy.
Page 44 - K Mistry, A Murthy, P Nguyen, H Pearson, T Sandford, R Schweinfurth, R Shaheed, S Sivakumar, M Taylor, B Tufts, C Wallace, P Wang, C Weber, and M Bohr. A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 u,m2 SRAM Cell.
Page 496 - Department of Electrical and Computer Engineering Carnegie Mellon University Pittsburgh, PA 15213 Abstract We consider the implementation of high capacity Ho-Kashyap (HK) associative processors (APs) on non-ideal optical and analog VLSI systems.
Page 311 - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 1 17576...
Page 44 - WG McMullan, S. Charbonneau and MLW Thewalt, "Simultaneous subnanosecond timing information and 2D spatial information from imaging photomultiplier tubes", Review of Scientific Instruments, vol.
Page 136 - SEM. The second imaging mode uses the ion beam while the electron beam is blanked. The FIB imaging mode is used for grain analysis, voltage contrast imaging and defining of milling areas. The last imaging mode is the so called CrossBeam operation mode: Both beams are turned on and while the ion beam is milling a defined area, the SEM is used to image the milling process at high resolution in real time. This enables the operator to control the milling process on a nanometre scale and to perform extremely...
Page 133 - ... Geometrical layout of the LEO 1500 CrossBeam system. The electron and the ion beam coincide at a crossover point 5mm below the objective lens of the SEM. The geometrical properties of the two columns allow ion milling on large samples (wafers) at angles up to 92° (in respect to the ion beam). 2.1 Electron Optics To examine nonconductive samples like photo resist, oxide layers, ceramics etc. in their natural state (ie without significant sample preparation like coating etc.) in the SEM the technique...
Page 157 - L. Kang, BH Lee, W.-J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi and JC Lee, IEEE Electron Device Letters, 21,181 (2000).