Introduction to Solid State Physicsproblems after each chapter |
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Page xiii
Impurity states . Thermal ionization of impurities . Mobility in the presence of
impurity atoms . Analysis of experimental results . Lifetime and recombination .
Minority carrier transport and hole injection . Cyclotron resonance experiments .
Impurity states . Thermal ionization of impurities . Mobility in the presence of
impurity atoms . Analysis of experimental results . Lifetime and recombination .
Minority carrier transport and hole injection . Cyclotron resonance experiments .
Page 354
In a compound semiconductor a stoichiometric deficiency of one constituent will
act as an impurity ; thus semiconductors such as Cu20 or ZnO are known as
deficit semiconductors . We consider in particular the effect of impurities in silicon
and ...
In a compound semiconductor a stoichiometric deficiency of one constituent will
act as an impurity ; thus semiconductors such as Cu20 or ZnO are known as
deficit semiconductors . We consider in particular the effect of impurities in silicon
and ...
Page 357
DONOR IONIZATION ENERGIES OF PENTAVALENT IMPURITIES IN
GERMANIUM AND SILICON , IN EV P As Sb Si ... Just as an electron may be
bound to a pentavalent impurity , a hole may be bound to a trivalent impurity in
germanium or ...
DONOR IONIZATION ENERGIES OF PENTAVALENT IMPURITIES IN
GERMANIUM AND SILICON , IN EV P As Sb Si ... Just as an electron may be
bound to a pentavalent impurity , a hole may be bound to a trivalent impurity in
germanium or ...
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Contents
DIFFRACTION OF XRAYS BY CRYSTALS | 44 |
CLASSIFICATION OF SOLIDS LATTICE ENERGY | 63 |
ELASTIC CONSTANTS OF CRYSTALS | 85 |
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alloys applied approximately associated atoms axis band boundary calculated cell chapter charge concentration condition conductivity consider constant crystal cubic density dependence determined dielectric diffusion direction discussion dislocation distribution domain effect elastic electric electron elements energy equal equation equilibrium experimental expression factor field force frequency function germanium give given heat capacity hexagonal holes important impurity increase interaction ionic ions lattice levels London magnetic magnetic field mass material measurements metals method motion normal observed obtained parallel particles Phys physics plane polarization positive possible potential problem properties range reference reflection region relation resistivity result room temperature rotation shown in Fig simple solid solution space space group specimen structure surface symmetry Table temperature theory thermal tion transition unit usually values vector volume wave zero zone