## MEMS and Microsystems: Design and ManufactureMicrosystems and MEMS technology represents one of the biggest breakthroughs in the area of mechanical and electronic technology to occur in recent years. This is the technology of extremely small and powerful devices – and systems built around such devices – which have mechanical and electrical components. MEMS technology is beginning to explode, with major application areas being telecommunications, biomedical technology, manufacturing and robotic systems, transportation and aerospace. Academics are desperate for texts to familiarize future engineers with this broad-ranging technology. Hsu's MEMS & MICROSYSTEMS text provides an engineering design approach to MEMS and microsystems, appropriate for professionals and senior level students. This design approach is conveyed through good examples, cases, and applied problems. The book is appropriate for Mechanical and Aerospace engineers, since it carefully explains the electrical/electronic aspects of the subject. Electrical Engineering students will be provided strong coverage of the mechanical side of MEMS, something they may not receive from other courses in their curriculum. |

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Page 244

Let us consider a point P ( x , y , z ) in an arbitrary

cartesian coordinate system x - y - z . The equation that defines the point P is ă +

x + x = 1 DIN ( 7 . 1 ) where a , b , and c are the intercepts formed by the

Let us consider a point P ( x , y , z ) in an arbitrary

**plane**in a space defined by thecartesian coordinate system x - y - z . The equation that defines the point P is ă +

x + x = 1 DIN ( 7 . 1 ) where a , b , and c are the intercepts formed by the

**plane**...Page 269

The toughest

cavity of a silicon die for a pressure sensor is ( 1 ) determined by choice , ( 2 ) a ...

The toughest

**plane**for processing in a single silicon crystal is ( 1 ) the ( 100 )**plane**, ( 2 ) the ( 110 )**plane**, ( 3 ) the ( 111 )**plane**. 22 . The 54 . 74° slope in thecavity of a silicon die for a pressure sensor is ( 1 ) determined by choice , ( 2 ) a ...

Page 312

Design and Manufacture Tai-Ran Hsu. Figure 9 . 2 | The three principal

silicon crystal . 2 II 11 Iii 11 n VI III UXIL 1 Will li TIL VL1 The ( 100 )

110 )

...

Design and Manufacture Tai-Ran Hsu. Figure 9 . 2 | The three principal

**planes**insilicon crystal . 2 II 11 Iii 11 n VI III UXIL 1 Will li TIL VL1 The ( 100 )

**plane**The (110 )

**plane**The ( 111 )**plane**edges . The ( 111 )**plane**, on the other hand , is the...

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actuators analysis application atoms attached base beam bonding boundary channel Chapter chemical coefficient components computed conduction constant crystal deposition described determined developed devices diaphragm diffusion direction doping effect electric electrons element energy engineering Equation etching example expressed fabrication field films flow fluid forces frequency function geometry heat illustrated in Figure industry interface involves ions layer length LIGA major manufacturing mass materials maximum means measure mechanical metal method micro microelectronics micromachining microsystems moving obtained oxidation packaging photoresist physical piezoelectric piezoresistors plane plate polymers position presented pressure sensor principle problem properties pumping ratio resistance scaling selected shown in Figure signal silicon substrate SiO2 solid solution specific stress structure surface surface tension Table techniques temperature thermal thickness thin transduction tube unit vibration voltage wafer