1989 Spring Meeting: Final Program and Abstracts, Materials Research Society 1989 Spring Meeting, April 24-29 Town & Country Hotel, San Diego, California |
From inside the book
Results 1-3 of 34
Page 66
... BORON AND PHOSPHORUS IN SILICON BY GERMANIUM IMPLANTATION DAMAGE P. Fahey and S. Mader IBM Research Division , T.J. Watson Research Laboratory , Yorktown Heights , NY 10598 . We investigate the underlying cause of the reported phenomena ...
... BORON AND PHOSPHORUS IN SILICON BY GERMANIUM IMPLANTATION DAMAGE P. Fahey and S. Mader IBM Research Division , T.J. Watson Research Laboratory , Yorktown Heights , NY 10598 . We investigate the underlying cause of the reported phenomena ...
Page 67
... BORON IN SILICON . Xi - mao Bao , Qiang Guo and Yong Yan , Department of physics , Nanjing University , Nanjing P.R. China The anomalous diffusion of implanted boron in sil- icon damaged by Si - implantation during RTA has been ...
... BORON IN SILICON . Xi - mao Bao , Qiang Guo and Yong Yan , Department of physics , Nanjing University , Nanjing P.R. China The anomalous diffusion of implanted boron in sil- icon damaged by Si - implantation during RTA has been ...
Page 128
... boron contamination in the reaction chamber . The effect of temperature is systematically investigated , and possible CVD reaction paths are discussed . Electrical measurements of devices containing p / or i / p interfaces are performed ...
... boron contamination in the reaction chamber . The effect of temperature is systematically investigated , and possible CVD reaction paths are discussed . Electrical measurements of devices containing p / or i / p interfaces are performed ...
Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
13 other sections not shown
Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications Argonne AT&T Bell Laboratories atomic behavior Berkeley bulk carbon ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds Corporation crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown HETEROEPITAXY HETEROSTRUCTURES high temperature hydrogen in-situ increase Institute of Technology interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory nucleation observed obtained optical oxide oxygen parameters particles phase plasma polyimide polymer powder properties rapid thermal annealing RAPID THERMAL PROCESSING reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal solid spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films wafer X-ray diffraction