1989 Spring Meeting: Final Program and Abstracts, Materials Research Society 1989 Spring Meeting, April 24-29 Town & Country Hotel, San Diego, California |
From inside the book
Results 1-3 of 82
Page 41
... in - situ measurements and real time control will be the essential requirements . Single wafer processing appears to be very attractive to meet these requirements . Thermal processes such as oxidation , CVD , diffusion and anneal are ...
... in - situ measurements and real time control will be the essential requirements . Single wafer processing appears to be very attractive to meet these requirements . Thermal processes such as oxidation , CVD , diffusion and anneal are ...
Page 42
... in a dendritic grain i.e. the decrease of small defects , which correspond ... situ poly Si deposi- tion have very broad ( > 6 V ) breakdown distribution ... in- situ poly Si deposition , respectively . These indicate that the in - situ ...
... in a dendritic grain i.e. the decrease of small defects , which correspond ... situ poly Si deposi- tion have very broad ( > 6 V ) breakdown distribution ... in- situ poly Si deposition , respectively . These indicate that the in - situ ...
Page 43
... in - situ with P and N dopants . This paper will describe the growth of epitaxial Si and Si - Ge layers by RTCVD , at temperatures of 600 ° C - 900 ° C , and the in - situ doping of such films by using AsH3 and B2H6 . We have grown Sil ...
... in - situ with P and N dopants . This paper will describe the growth of epitaxial Si and Si - Ge layers by RTCVD , at temperatures of 600 ° C - 900 ° C , and the in - situ doping of such films by using AsH3 and B2H6 . We have grown Sil ...
Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
13 other sections not shown
Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications Argonne AT&T Bell Laboratories atomic behavior Berkeley bulk carbon ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds Corporation crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown HETEROEPITAXY HETEROSTRUCTURES high temperature hydrogen in-situ increase Institute of Technology interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory nucleation observed obtained optical oxide oxygen parameters particles phase plasma polyimide polymer powder properties rapid thermal annealing RAPID THERMAL PROCESSING reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal solid spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films wafer X-ray diffraction