1989 Spring Meeting: Final Program and Abstracts, Materials Research Society 1989 Spring Meeting, April 24-29 Town & Country Hotel, San Diego, California |
From inside the book
Results 1-3 of 79
Page 106
... studied by the electron paramagnetic resonance technique ( EPR ) the paramagnetic centers introduced by the doping of MOCVD Ga0.70A10.30As with the Sn donor . After low temperature photoexcitation the samples presented two different ...
... studied by the electron paramagnetic resonance technique ( EPR ) the paramagnetic centers introduced by the doping of MOCVD Ga0.70A10.30As with the Sn donor . After low temperature photoexcitation the samples presented two different ...
Page 165
... studied the low temperature specific heat capacity of Zn , -xFexSe , Cd . - Fe , Se and Hg , - , Fe , Se for x between 0 and 0.25 . On the whole , the behavior of the magnetic specific heat ( Cm ) is the same for all the studied systems ...
... studied the low temperature specific heat capacity of Zn , -xFexSe , Cd . - Fe , Se and Hg , - , Fe , Se for x between 0 and 0.25 . On the whole , the behavior of the magnetic specific heat ( Cm ) is the same for all the studied systems ...
Page 230
... studied by comparing infrared spectra collected in situ and after air exposure . For NF3 / 02 plasma treated polyimides and PMMA significant changes occured while samples fluorinated in NF3 showed relatively minor changes with exposure ...
... studied by comparing infrared spectra collected in situ and after air exposure . For NF3 / 02 plasma treated polyimides and PMMA significant changes occured while samples fluorinated in NF3 showed relatively minor changes with exposure ...
Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
13 other sections not shown
Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications Argonne AT&T Bell Laboratories atomic behavior Berkeley bulk carbon ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds Corporation crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown HETEROEPITAXY HETEROSTRUCTURES high temperature hydrogen in-situ increase Institute of Technology interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory nucleation observed obtained optical oxide oxygen parameters particles phase plasma polyimide polymer powder properties rapid thermal annealing RAPID THERMAL PROCESSING reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal solid spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films wafer X-ray diffraction