## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

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Page 228

For a complete discussion of fcz-

refer the reader to [21, 28]. In general, the larger the energy distance from the

band extremum, the more accurate the description of the nonparabolicity should

be.

For a complete discussion of fcz-

**dispersion**in GaAs-AlGaAs superlattices, werefer the reader to [21, 28]. In general, the larger the energy distance from the

band extremum, the more accurate the description of the nonparabolicity should

be.

Page 245

the bulk

successive GaAs-like or AlAs-like confined modes (denoted by wlo!T or wlo^,

with m = 1, n) can be mapped onto the corresponding bulk LO

...

the bulk

**dispersion**has been explained a few years ago [2-4]. The frequencies ofsuccessive GaAs-like or AlAs-like confined modes (denoted by wlo!T or wlo^,

with m = 1, n) can be mapped onto the corresponding bulk LO

**dispersions**by an...

Page 315

As far as the acoustic region ((0-r200)cm_1 ) is concerned, the

are called the «folded acoustic branches» since they are actually very close to

the curves obtained by merely folding, in the mini-Brillouin-zone, the acoustic ...

As far as the acoustic region ((0-r200)cm_1 ) is concerned, the

**dispersion**curvesare called the «folded acoustic branches» since they are actually very close to

the curves obtained by merely folding, in the mini-Brillouin-zone, the acoustic ...

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### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

51 other sections not shown

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### Common terms and phrases

absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width