## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

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Page vii

VSi2, NbSi2, TaSi2 » 135 3'3. Optical response vs. stoichiometry: Ni silicides »

138 3"4. Optical properties of WSi2 » 142 3'4.1. Theory and

4.2.

**Experimental**» 131 31.2. Optical properties of metals » 132 32. VA group TMS:VSi2, NbSi2, TaSi2 » 135 3'3. Optical response vs. stoichiometry: Ni silicides »

138 3"4. Optical properties of WSi2 » 142 3'4.1. Theory and

**experiment**» 142 3'4.2.

Page 273

14 are, therefore, a good starting point for a comparison with the

results of fig. 2. In the GaAs-like range, we note that the opposite sign of the

disorder-induced frequency shift for n = 1 with respect to n = 2 and n = 3 is the

key ...

14 are, therefore, a good starting point for a comparison with the

**experimental**results of fig. 2. In the GaAs-like range, we note that the opposite sign of the

disorder-induced frequency shift for n = 1 with respect to n = 2 and n = 3 is the

key ...

Page 348

InxGai_xAs/GaAs coupled multiple quantum wells for sample B(x<=0.2). The

energies relative to the lowest-lying transition, 11H(T), also are listed. ton binding

...

**Experimental**and theoretical values at 77 K of the energies of the features ofInxGai_xAs/GaAs coupled multiple quantum wells for sample B(x<=0.2). The

energies relative to the lowest-lying transition, 11H(T), also are listed. ton binding

...

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### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

51 other sections not shown

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### Common terms and phrases

absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width