## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

### From inside the book

Results 1-3 of 74

Page 72

results are

amount to ~ 0.1 eV and ~ 0.03 eV, respectively. The resulting corrected value of

the VBO would be = (0.58 -s- 0.60) eV, to be compared with the experimental

data ...

results are

**obtained**neglecting many-body [30] and relativistic effects whichamount to ~ 0.1 eV and ~ 0.03 eV, respectively. The resulting corrected value of

the VBO would be = (0.58 -s- 0.60) eV, to be compared with the experimental

data ...

Page 262

In the important case of Si and Ge, errors of =20 cm1 are

phonons. In the case of GaAs and GaSb (which differ for the anionic species and

have a rather large lattice mismatch) the mass approximation gives even poorer ...

In the important case of Si and Ge, errors of =20 cm1 are

**obtained**on the opticphonons. In the case of GaAs and GaSb (which differ for the anionic species and

have a rather large lattice mismatch) the mass approximation gives even poorer ...

Page 285

mic i-matrix: single-site approximation (SSA) is

correlation term. Under this assumption S takes the final form (7) 5 = S<Ti)(T + G0

(T1))"1 . i By taking into account the translation^ invariance of (G) and S we write

eq.

mic i-matrix: single-site approximation (SSA) is

**obtained**by neglecting thecorrelation term. Under this assumption S takes the final form (7) 5 = S<Ti)(T + G0

(T1))"1 . i By taking into account the translation^ invariance of (G) and S we write

eq.

### What people are saying - Write a review

We haven't found any reviews in the usual places.

### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

51 other sections not shown

### Other editions - View all

### Common terms and phrases

absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width