## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

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Results 1-3 of 67

Page 99

The resulting fitting

Whith these

taking into account the appropriate growth velocities for each sample group.

The resulting fitting

**parameters**were C = 3.95 . 10 21 cm2s3g"2 and Yo = 110"4.Whith these

**parameters**the equation has then been computed for all the samplestaking into account the appropriate growth velocities for each sample group.

Page 226

It would be more realistic to talk about an interface layer, comprising several

atomic planes, separating the two semiconductors, and characterized by given

reflection and transmission coefficients. These would be again

unknown ...

It would be more realistic to talk about an interface layer, comprising several

atomic planes, separating the two semiconductors, and characterized by given

reflection and transmission coefficients. These would be again

**parameters**ofunknown ...

Page 248

Suppose that the bare external potential acting on the electrons, V* (which we

assume for simplicity to be local), is a continuous function of some

= {A, }. The Hellmann-Feynman theorem states that the «force» associated with

the ...

Suppose that the bare external potential acting on the electrons, V* (which we

assume for simplicity to be local), is a continuous function of some

**parameters**A= {A, }. The Hellmann-Feynman theorem states that the «force» associated with

the ...

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### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

51 other sections not shown

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absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width