## Semiconductor superlattices and interfaces: Varenna on Lake Como, Villa Monsatero, 25 June-5 July 1991This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds. |

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Page 92

As a consequence of the strain in the film a force F, is applied to the dislocation in

its glide

the angle between the slip direction and the direction in the interface

As a consequence of the strain in the film a force F, is applied to the dislocation in

its glide

**plane**. This force can be expressed by (17) F£ = bhvc cos A, where A isthe angle between the slip direction and the direction in the interface

**plane**...Page 195

The main effects are the reduction of the dimension of the k space (the k vector is

defined as kn only in the

holes inside the well [26]. Binding energies and oscillator strengths are larger ...

The main effects are the reduction of the dimension of the k space (the k vector is

defined as kn only in the

**plane**of the well) and the confinement of electrons andholes inside the well [26]. Binding energies and oscillator strengths are larger ...

Page 229

The valence bands are anisotropic and, therefore, one has to expect that also for

heterostructures the band dispersion will be different for different directions in the

(kx, A;^-

The valence bands are anisotropic and, therefore, one has to expect that also for

heterostructures the band dispersion will be different for different directions in the

(kx, A;^-

**plane**. However, this warping of the bands is small and a good ...### What people are saying - Write a review

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### Contents

Esaki The evolution of semiconductor quantum structures | 1 |

Conclusion | 20 |

F Flores J Ortega and R Perez Theoretical models on the for | 39 |

Copyright | |

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absorption acoustic AlAs-like alloy AppL Phys atoms band discontinuities band gap band lineup band offset barrier beam Brillouin zone bulk calculated Capasso cationic charge neutrality levels conduction band confined corresponding crystal density dielectric dielectric function dipole disorder dispersion doping edited effects electric field electron energy envelope function epitaxial equation Esaki exciton experimental Fermi force constants frequency GaAs GaAs-like GaAs/AlAs growth heterojunction heterostructures interaction interband interface intralayer laser lattice layers Lett mass material matrix metal microscopic modes modulation monolayer neutrality levels obtained optical oscillations parameters peaks perturbation phonons Physics plane polaritons polarization potential problem properties quantum dots quantum wires resonance samples scattering semiconductor shown in fig silicides SL's solid spectrum strain structures subbands substrate supercell superlattice surface symmetry techniques temperature theoretical thickness tion transitions tunnelling valence band vibrational voltage wave functions wave vector wavelength width