Rendiconti della Scuola internazionale di fisica "Enrico Fermi." |
Contents
Introduction | 1 |
Transport and optical properties in superlattices and quantum wells | 9 |
Conclusion | 20 |
a new weapon in todays experimental arsenal | 27 |
Examples of results for some systems | 31 |
Future avenues | 35 |
Metalsemiconductor interfaces | 39 |
External magnetic fields | 41 |
105 | 322 |
W MOLENKAMP H VAN HOUTEN C W J BEENAKKER and C | 365 |
Introduction | 379 |
quantum devices | 386 |
tunable discontinuities | 392 |
Pattern transferadditive processing pag | 403 |
Etching | 404 |
Dryetching damage | 406 |
Monolayer regime | 53 |
Isovalent substitutions | 62 |
Band offsets and linearresponse scheme | 69 |
interface dipoles | 76 |
Conclusions | 83 |
Samples | 93 |
Experimental techniques | 96 |
Experimental results | 98 |
A STELLA | 105 |
G GUIZZETTI and A PIAGGI Optical properties of silicides | 123 |
Excitons in semiconductors | 131 |
Electrooptical applications | 153 |
YONG CHEN | 169 |
Excitons in quantum wells | 188 |
Excitonpolariton states | 190 |
Experiment | 198 |
S BARONI P PAVONE P GIANNOZZI S DE GIRONCOLI and E MOLI | 243 |
Densityfunctional perturbation theory | 249 |
Line shape analysis | 267 |
Conclusions | 408 |
A BOSACCHI and S FRANCHI Molecularbeam epitaxy of advanced structures based on IIIV compounds 1 Introduction pag | 411 |
Fundamentals of the MBE growth process | 412 |
Technology of MBE | 416 |
MBE growth fronts and interfaces | 419 |
Epitaxial structures | 421 |
Conclusions | 428 |
CARDONA Problems in optical properties of semiconductors and their solutions 1 Introduction | 435 |
Plasmons carrier effective masses | 436 |
Symmetry effects | 441 |
123 | 446 |
Phonons in bulk crystals and superlattices | 447 |
Coupling mechanisms in Raman scattering by phonons | 450 |
Surface excitations | 456 |
Stress and strain effects | 461 |
Impurities isotopic disorder | 463 |
Widths and selfenergies of excitons | 468 |
Copyright | |